charging pile | article center | liz electronics (kunshan) co., ltd.-九游官网下载

charging pile

home > industry application > energy > charging pile

application overview

alternative energy often refers to energy sources that replace petrochemical fuels such as oil, natural gas, and coal. it includes renewable energy sources such as wind energy, solar energy, biomass energy, ocean energy, and water energy, as well as non-renewable energy sources such as nuclear energy. among all kinds of alternative energy sources, biofuels, wind energy and solar energy have developed the fastest in recent years, and the industry has the best prospects and is a star among alternative energy sources. with the establishment of the strategic positioning and development goals of renewable energy. the development goals also showed the characteristics of unity, coordination and scientificity.

charging pile

high power resistance
- series：ur
  power (w)：1/8w~1w
  specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：pls see detail in datasheet
- series：ch
  power (w)：1/10w~2w
  specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：0.05ω~1ω
- series：ch
  power (w)：1/10w~2w
  specification：0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 2% 5%
  block：1ω~10mω
anti-surge resistance
- series：rs
  power (w)：1/10w~1w
  specification：0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 2% 5% 10% 15% 20%
  block：1ω~1mω
chip thick film resistor
- series：rc
  power (w)：1/10w~1/4w
  specification：0603（1608） 0805（2012） 1206（3216）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 2% 5%
  block：47ω~10mω
- series：rl
  power (w)：1/20w~1w
  specification：0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：0.1% 0.5%1% 5%
  block：1ω~1mω
- series：cr
  power (w)：1/8w~1/4w
  specification：0805（2012） 1206（3216）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 2% 5%
  block：1ω~10mω
- series：ca
  power (w)：1/16w~1/10w
  specification：ca024a ca034a
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：1ω~1mω
- series：cr
  power (w)：1/16w~1w
  specification：0402~2512
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：0.02ω~1ω
- series：pf
  power (w)：1/20w~1w
  specification：0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：0.1% 0.5%1% 2% 5%
  block：1ω~22mω
- series：cr
  power (w)：1/20w~1w
  specification：01005（0402） 0201（0603） 0402（1005） 0603（1608） 0805（2012） 1206（3216） 1210（5025） 2512（6432）
  temperature coefficient：pls see detail in datasheet
  accuracy：0.1% 0.5% 1% 5%
  block：1ω~100mω
alloy chip resistor
- series：rm
  power (w)：3w
  specification：2512（6432）
  temperature coefficient：±50ppm/℃
  accuracy：1% 2% 5%
  block：1mω~10mω
alloy foil chip resistor
- series：ra
  power (w)：1/2w
  specification：0805（2012）
  temperature coefficient：±100ppm/℃ ±75ppm/℃ ±50ppm/℃
  accuracy：1% 2% 5%
  block：1.5mω~2mω 3mω~4mω 5mω~100mω
low resistance low tc high power thick film chip resistor
- series：ur
  power (w)：1w
  specification：2512（6432）
  temperature coefficient：±250ppm/℃ ±100ppm/℃
  accuracy：1% 5%
  block：0.010ω~0.030ω 0.033ω~0.910ω
low resistance high power thick film resistor
- series：ch
  power (w)：1w
  specification：2010（5025）
  temperature coefficient：pls see detail in datasheet
  accuracy：1% 5%
  block：0.10ω~1ω(不含)
chip zener diode
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：2.4v~75v (2.4vonly 5%）
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：depending on voltage
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：5.1v~5.6v
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：<100
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：5.1v~5.6v
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：<100
- number of channels：1
  spilled power mw：mw
  repeated recovery current：200
  forward voltage v：v(max.)
  zener voltage range：5.1v~5.6v
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：5
  maximum zener impedance (ω)：depending on voltage
  maximum zener impedance (ma)：1
  maximum reverse leakage current (ua))：<100
switching diode
- maximum reverse voltage (v)：75
  average rectified forward current (a)：0.15
  forward voltage (v)：1 @ if=50ma
  reverse current (ua)：0.025 @ vr=20v 2.5 @ vr=75v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.46 @ if=10ma
  reverse current (ua)：0.3 @ vr=10v
  package：dfn1006-2
schottky diodes
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.37 @ if=10ma
  reverse current (ua)：7 @ vr=10v
  package：dfn0603-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.46 @ if=10ma
  reverse current (ua)：0.3 @ vr=10v
  package：dfn0603-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.29 @ if=10ma 0.30 @ if=20ma 0.40 @ if=100ma
  reverse current (ua)：30 @ vr=30v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.1
  forward voltage (v)：0.51 @ if=100ma
  reverse current (ua)：1 @ vr=10v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.1
  forward voltage (v)：0.34 @ if=10ma 0.55 @ if=100ma
  reverse current (ua)：10 @ vr=10v 40 @ vr=40v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.1
  forward voltage (v)：0.36 @ if=10ma 0.51 @ if=100ma
  reverse current (ua)：1 @ vr=10v 5 @ vr=40v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.2
  forward voltage (v)：0.50 @ if=200ma
  reverse current (ua)：10 @ vr=10v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.2
  forward voltage (v)：0.60 @ if=200ma
  reverse current (ua)：1 @ vr=10v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.2
  forward voltage (v)：0.33 @ if=10ma 0.52 @ if=200ma
  reverse current (ua)：10 @ vr=10v 40 @ vr=40v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.2
  forward voltage (v)：0.36 @ if=10ma 0.60 @ if=200ma
  reverse current (ua)：1 @ vr=10v 5 @ vr=40v
  package：dfn1006-2
- maximum reverse voltage (v)：20
  average rectified forward current (a)：0.5
  forward voltage (v)：0.27 @ if=10ma 0.46 @ if=500ma
  reverse current (ua)：20 @ vr=10v 30 @ vr=20v
  package：dfn1006-2
- maximum reverse voltage (v)：30
  average rectified forward current (a)：0.5
  forward voltage (v)：0.27 @ if=10ma 0.46 @ if=500ma
  reverse current (ua)：20 @ vr=10v 40 @ vr=30v
  package：dfn1006-2
- maximum reverse voltage (v)：40
  average rectified forward current (a)：0.5
  forward voltage (v)：0.27 @ if=10ma 0.46 @ if=500ma
  reverse current (ua)：20 @ vr=10v 50 @ vr=40v
  package：dfn1006-2
antistatic surge diode
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：5.6
  leakage current (na)：10
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±30
  maximum peak pulse current (a) tp = 8/20 μs：3.5
  clamping voltage (v) tp = 8/20 μs：3.5
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：10
  package：dfn0603-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±19
  antistatic ability (gap) (kv)：±19
  maximum peak pulse current (a) tp = 8/20 μs：2
  clamping voltage (v) tp = 8/20 μs：12 @ipp=1a 15 @ipp=2a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.6
  package：dfn0603-2
- number of channels：1
  starting voltage (v)：3.3
  breakdown voltage (v)：3.5
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±30
  antistatic ability (gap) (kv)：±30
  maximum peak pulse current (a) tp = 8/20 μs：15
  clamping voltage (v) tp = 8/20 μs：6.0 @ipp=1a 12 @ipp=15a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：30
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：3.3
  breakdown voltage (v)：4
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±12
  antistatic ability (gap) (kv)：±20
  maximum peak pulse current (a) tp = 8/20 μs：5
  clamping voltage (v) tp = 8/20 μs：5.5 @ipp=1a 8.0 @ipp=5a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：10
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±30
  antistatic ability (gap) (kv)：±30
  maximum peak pulse current (a) tp = 8/20 μs：7.9
  clamping voltage (v) tp = 8/20 μs：9.0 @ipp=1a 17.5 @ipp=7.9a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：20
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：2
  clamping voltage (v) tp = 8/20 μs：14 @ipp=1a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.6
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：100
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：2
  clamping voltage (v) tp = 8/20 μs：12 @ipp=1a 17 @ipp=2a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：10
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：2
  clamping voltage (v) tp = 8/20 μs：14 @ipp=1a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.3
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：10
  clamping voltage (v) tp = 8/20 μs：13.5 @ipp=10a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：80
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±18
  antistatic ability (gap) (kv)：±20
  maximum peak pulse current (a) tp = 8/20 μs：3.6
  clamping voltage (v) tp = 8/20 μs：12 @ipp=1a 20 @ipp=3a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.5
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：12
  breakdown voltage (v)：14.6
  leakage current (na)：50
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±16
  maximum peak pulse current (a) tp = 8/20 μs：6
  clamping voltage (v) tp = 8/20 μs：19 @ipp=1a 25 @ipp=6a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：30
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：12
  breakdown voltage (v)：13.3
  leakage current (na)：50
  antistatic ability (contact) (kv)：±30
  antistatic ability (gap) (kv)：±30
  maximum peak pulse current (a) tp = 8/20 μs：5
  clamping voltage (v) tp = 8/20 μs：19 @ipp=1a 24 @ipp=5a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：60
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：24
  breakdown voltage (v)：26.5
  leakage current (na)：50
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±25
  maximum peak pulse current (a) tp = 8/20 μs：3
  clamping voltage (v) tp = 8/20 μs：36 @ipp=1a 42 @ipp=3a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：30
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：24
  breakdown voltage (v)：26.5
  leakage current (na)：50
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±25
  maximum peak pulse current (a) tp = 8/20 μs：3
  clamping voltage (v) tp = 8/20 μs：36 @ipp=1a 42 @ipp=3a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：35
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：36
  breakdown voltage (v)：40
  leakage current (na)：100
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±25
  maximum peak pulse current (a) tp = 8/20 μs：1.5
  clamping voltage (v) tp = 8/20 μs：58 @ipp=1a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：20
  package：dfn1006-2
- number of channels：1
  starting voltage (v)：36
  breakdown voltage (v)：40
  leakage current (na)：100
  antistatic ability (contact) (kv)：±25
  antistatic ability (gap) (kv)：±25
  maximum peak pulse current (a) tp = 8/20 μs：1.5
  clamping voltage (v) tp = 8/20 μs：58 @ipp=1a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：30
  package：dfn1006-2
- number of channels：4
  starting voltage (v)：3.3
  breakdown voltage (v)：3.4
  leakage current (na)：100
  antistatic ability (contact) (kv)：±8
  antistatic ability (gap) (kv)：±15
  maximum peak pulse current (a) tp = 8/20 μs：4
  clamping voltage (v) tp = 8/20 μs：8 @ipp=1a 10 @ipp=3a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.65
  package：dfn2510-10
- number of channels：4
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±12
  antistatic ability (gap) (kv)：±17
  maximum peak pulse current (a) tp = 8/20 μs：5
  clamping voltage (v) tp = 8/20 μs：15 @ipp=1a 25 @ipp=5a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.8
  package：dfn2510-10
- number of channels：4
  starting voltage (v)：5
  breakdown voltage (v)：6
  leakage current (na)：1000
  antistatic ability (contact) (kv)：±12
  antistatic ability (gap) (kv)：±17
  maximum peak pulse current (a) tp = 8/20 μs：3.4
  clamping voltage (v) tp = 8/20 μs：15 @ipp=1a 25 @ipp=3.4a
  capacitance (pf) i/o-gnd vr=0v, f=1mhz：0.4
  package：dfn2510-10